N,N,N′,N′-Tetrakis butoxymethyl urea CAS 43539-97-1 – Ultra Pure Crosslinker for Advanced Lithography

Specifications of N,N,N′,N′-Tetrakis(butoxymethyl)urea CAS 3089-11-0

Specification 1:Purity≥99.5%,Total metal impurities≤500ppb

Specification 2:Purity≥99.9%,Single metal impurity≤10ppb

Name	N,N,N′,N′-Tetrakis(butoxymethyl)urea
CAS Number	43539-97-1
Molecular Formula	C₂₁H₄₄N₂O₅
Structural Formula
Applications	Semiconductor materials, photoresists, ArF, KrF
Purity	Grade 1: Purity ≥99.5%, total impurities ≤500 ppb Grade 2: Purity ≥99.9%, single metal impurity ≤10 ppb
Packaging Specification	20 kg/drum, 25 kg/drum

Applications of N,N,N′,N′-Tetrakis(butoxymethyl)urea CAS 3089-11-0

In semiconductor microelectronics, it acts as a proprietary core crosslinker for high end photoresists and ultra fine ArF and KrF lithography, featuring ultra low trace metal residues.

FAQ

Q1:How low are the metal impurities for advanced photoresists?

A:Top tier specification achieves single metal ≤10ppb and total impurities ≤500ppb.

Q2:What container sizes are provided?

A:Dedicated 20kg and 25kg ultra-clean electronic drums.

Q3:Can you attach a full ICP-MS element analysis report?

A:Electronic grade shipments include a comprehensive ICP-MS trace element report.